PSMN016-100YS,115 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN016-100YS,115
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 117W
- Total Gate Charge (Qg@Vgs): 54nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 2744pF@50V
- Continuous Drain Current (Id): 51A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@1mA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 16.3mΩ@15A,10V
- Package: SOT-669
- Manufacturer: Nexperia
